Semiconductor packages and manufacturing mehtods thereof

ABSTRACT

Sensor packages and manufacturing methods thereof are disclosed. One of the sensor packages includes a semiconductor chip and a redistribution layer structure. The semiconductor chip has a sensing surface. The redistribution layer structure is arranged to form an antenna transmitter structure aside the semiconductor chip and an antenna receiver structure over the sensing surface of the semiconductor chip.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation application of and claims thepriority benefit of a prior application Ser. No. 15/235,106, filed onAug. 12, 2016. The prior application Ser. No. 15/235,106 the prioritybenefits of U.S. provisional application Ser. No. 62/341,633, filed onMay 26, 2016. The entirety of each of the above-mentioned patentapplications is hereby incorporated by reference herein and made a partof this specification.

BACKGROUND

Assembling several integrated circuits required by a system in a singlepackage is now a common practice for complex electronic systems, and isoften referred to as system-in-package (SIP). A SIP assembly may containdigital, analog, mixed-signal, and often radio-frequency functions in asingle package. For SIP applications, an antenna transceiver designed totransmit or receive electromagnetic waves is applied for millimeter wavewireless communication, WiFi, and telecommunication, etc. However, thelarge size of the antenna transceiver and the production cost areproblematic.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A to FIG. 1G are cross-sectional views of a method of forming asensor package in accordance with some embodiments.

FIGS. 2 and 3 are simplified top views of antenna transmitter structuresand antenna receiver structures of sensor packages in accordance withsome embodiments.

FIG. 4A to FIG. 4F are cross-sectional views of a method of forming asensor package in accordance with alternative embodiments.

FIGS. 5 and 7-10 are cross-sectional views of sensor packages inaccordance with some embodiments.

FIG. 6 is a simplified top view of an antenna transmitter structure andan antenna receiver structure of a sensor package in accordance withsome embodiments.

FIG. 11 to FIG. 13 are cross-sectional views of sensor packages inaccordance with yet alternative embodiments.

FIG. 14 is a simplified top view of an antenna transmitter structure andan antenna receiver structure of a sensor package in accordance with yetalternative embodiments.

FIG. 15 is a flow chart illustrating a method of forming a sensorpackage in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow for the purposes of conveying the present disclosure in asimplified manner. These are, of course, merely examples and are notintended to be limiting. For example, the formation of a second featureover or on a first feature in the description that follows may includeembodiments in which the second and first features are formed in directcontact, and may also include embodiments in which additional featuresmay be formed between the second and first features, such that thesecond and first features may not be in direct contact. In addition, thesame reference numerals and/or letters may be used to refer to the sameor similar parts in the various examples the present disclosure. Therepeated use of the reference numerals is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath”, “below”, “lower”,“on”, “over”, “overlying”, “above”, “upper” and the like, may be usedherein to facilitate the description of one element or feature'srelationship to another element(s) or feature(s) as illustrated in thefigures. The spatially relative terms are intended to encompassdifferent orientations of the device in use or operation in addition tothe orientation depicted in the figures. The apparatus may be otherwiseoriented (rotated 90 degrees or at other orientations) and the spatiallyrelative descriptors used herein may likewise be interpretedaccordingly.

FIG. 1A to FIG. 1G are cross-sectional views of a method of forming asensor package in accordance with some embodiments.

Referring to FIG. 1A, a carrier C1 is provided with a semiconductor chip100 and at least one through-via TV. In some embodiments, the carrier C1has a de-bonding layer (not shown) and a dielectric layer (not shown)formed thereon, and the de-bonding layer is between the carrier C1 andthe dielectric layer. In some embodiments, the carrier C1 is a glasssubstrate, the de-bonding layer is a light-to-heat conversion (LTHC)release layer formed on the glass substrate, and the dielectric layer isa polybenzoxazole (PBO) layer formed on the de-bonding layer, forexample. In some embodiments, the carrier C1 has a package region 10including a chip region 12 and a periphery region 14 aside or around thechip region 12, the semiconductor chip 100 is in the chip region 12 andthe through-via TV is in the periphery region 14. In some embodiments,the semiconductor chip 100 is a logic chip, a sensor chip or an imagingchip, and has a sensing surface 101 at the front side thereof. In someembodiments, the semiconductor chip 100 has a substrate 102, at leastone pad 103 over the substrate 102, a passivation layer 104 over thesubstrate 102 and exposing a portion of the pad 103, and at least oneconnector 105 over the passivation layer 104 and electrically connectedto the pad 103. Specifically, the connector 105 is formed as the topportion of the semiconductor chip 100. The connector 105 protrudes fromthe remaining portion or lower portion of the semiconductor chip 100. Insome embodiments, the connector 105 includes a solder bump, a gold bump,a copper post or the like, and is formed with an electroplating process.In some embodiments, the through-via TV includes copper, nickel, solder,a combination thereof or the like, and is formed with an electroplatingprocess. In some embodiments, the through-via TV is formed on thecarrier C1 after the semiconductor chip 100 is picked and placed on thecarrier C1. In alternative embodiments, the through-via TV is formed onthe carrier C1 before the semiconductor chip 100 is picked and placed onthe carrier C1.

Referring to FIG. 1B, an encapsulant 108 is formed over the carrier C1to encapsulate the semiconductor chip 100 and the through-via TV. Insome embodiments, the encapsulant 108 surrounds the semiconductor chip100 and the through-via TV, and exposes the surfaces of the through-viaTV and the connector 105. The encapsulant 108 includes a moldingcompound such as epoxy, a photo-sensitive material such aspolybenzoxazole (PBO), polyimide or benzocyclobutene (BCB), acombination thereof or the like. The method of forming the encapsulant108 includes forming an encapsulant material layer (not shown) on thecarrier C1 covering the semiconductor chip 100 and the through-via TV,and performing a grinding process to partially remove the encapsulantmaterial layer until the surfaces of the through-via TV and theconnector 105 are exposed.

Referring to FIG. 1C, a redistribution layer structure 112 is formedover the sensing surface 101 (and over the encapsulant 108 in theinstant example) of the semiconductor chip 100, which is patterned todefine an antenna transmitter structure AT, an antenna receiverstructure AR and a redistribution layer RDL. The redistribution layerstructure 112 is referred to as a “front-side redistribution layerstructure” through the specification. In some embodiments, theredistribution layer RDL is formed between the antenna transmitterstructure AT and the antenna receiver structure AR. In some embodiments,the antenna receiver structure AR includes a plurality of first patternsP1 over the sensing surface 101 of the semiconductor chip 100. In someembodiments, the redistribution layer RDL is formed to electricallyconnect to the through-via TV and the connector 105, the antennatransmitter structure AT is formed to electrically couple to a signaltransmitting terminal (not shown), and the antenna receiver structure ARis formed to electrically couple to the semiconductor chip 100.

In some embodiments, the first patterns P1 of the antenna receiverstructure AR are arranged in an array, and the antenna transmitterstructure AT surrounds the first patterns P1 of the antenna receiverstructure AR. In some embodiments, the transmitter structure AT has aring shape, and each of the first patterns P1 of the antenna receiverstructure AR has an island shape or a fishbone shape, as shown in thetop views of FIGS. 2 and 3. However, the disclosure is not limitedthereto. The shape of each of the antenna transmitter structure AT andthe antenna receiver structure AR can be adjusted depending on thefrequency and the polarity of the electromagnetic field of the antennatransceiver. In other words, upon the process requirements, thetransmitter structure AT can have a ring shape, a bar shape, a spiralshape, a wave shape, a meandering shape or a combination thereof, andeach of the first patterns P1 of the antenna receiver structure AR canhave a ring shape, a snake shape, a bar shape, a fishbone shape, a fenceshape, a grid shape, a ring shape or a combination thereof.

The method of forming the redistribution layer structure 112 includesthe following operations. In some embodiments, a polymer layer 110 isformed across the chip region 12 and the periphery region 14 and exposesthe surfaces of the through-via TV and the connector 105. In someembodiments, the polymer layer 110 includes PBO, polyimide, BCB, acombination thereof or the like. Thereafter, a seed material layer (notshown) is formed across the chip region 12 and the periphery region 14,covers the surface of the polymer layer 110 and the surfaces of thethrough-via TV and the connector 105 exposed by the polymer layer 110.In some embodiments, the seed material layer includes a titanium/coppercomposite layer, and is formed by a sputtering process. Thereafter, aphotoresist layer (not shown) with openings is formed on the seedmaterial layer, and the openings of the photoresist layer expose theintended locations for the subsequently formed redistribution layerstructure 112. Afterwards, a plating process is performed to form ametal material layer (e.g., a copper layer) on the seed material layerexposed by the openings of the photoresist layer. The photoresist layerand the underlying seed material layer are removed, so as to form theredistribution layer structure 112. Thereafter, a polymer layer 114 isformed over the redistribution layer structure 112. In some embodiments,the polymer layer 114 includes PBO, polyimide, BCB, a combinationthereof or the like.

Referring to FIG. 1D, the carrier C1 is de-bonded from the backside ofthe structure, and another carrier C2 is bonded to the front side of thesame structure. In some embodiments, the carrier C1 with thesemiconductor chip 100, the through-via TV, the encapsulant 108 and theredistribution layer structure 112 is turned over and bonded to thecarrier C2, the de-bonding layer of the carrier C1 is decomposed underheat of light, and the carrier C1 is then released from the structureformed thereon. In some embodiments, the carrier C2 is of the resultingstructure. In some embodiments, the carrier C2 has a de-bonding layer(not shown) and a dielectric layer (not shown) formed thereon, thede-bonding layer is between the carrier C2 and the dielectric layer, andthe dielectric layer is bonded to the polymer layer 114. In someembodiments, the carrier C2 is a glass substrate, the de-bonding layeris a LTHC release layer formed on the glass substrate, and thedielectric layer is a PBO layer formed on the de-bonding layer, forexample.

Referring to FIG. 1E, a redistribution layer structure 118 is formedover the backside of the semiconductor chip 100. The redistributionlayer structure 118 is referred to as a “backside redistribution layerstructure” through the specification. In some embodiments, theredistribution layer structure 118 is formed to electrically connect tothe through-via TV.

The method of forming the redistribution layer structure 118 includesthe following operations. In some embodiments, a polymer layer 116 isformed across the chip region 12 and the periphery region 14 and exposesthe surface of the through-via TV. In some embodiments, the polymerlayer 116 includes PBO, polyimide, BCB, a combination thereof or thelike. Thereafter, a seed material layer (not shown) is formed across thechip region 12 and the periphery region 14, covers the surface of thepolymer layer 116 and the surface of the through-via TV exposed by thepolymer layer 116. In some embodiments, the seed material layer includesa titanium/copper composite layer, and is formed by a sputteringprocess. Thereafter, a photoresist layer (not shown) with openings isformed on the seed material layer, and the openings of the photoresistlayer expose the intended locations for the subsequently formedredistribution layer structure 118. Afterwards, a plating process isperformed to form a metal material layer (e.g., a copper layer) on theseed material layer exposed by the openings of the photoresist layer.The photoresist layer and the underlying seed material layer areremoved, so as to form the redistribution layer structure 118.

Referring to FIG. 1F, solder bumps (e.g., balls 120) are placed on andelectrically connected to the redistribution layer structure 118. Insome embodiments, the balls 120 are made of a conductive material withlow resistivity, such as Sn, Pb, Ag, Cu, Ni, Bi or an alloy thereof, andare formed by a suitable process such as evaporation, plating, balldrop, or screen printing. Thereafter, an underfill layer 122 isoptionally formed to encapsulate the redistribution layer structure 118and the lower portions of the balls 120. The underfill layer 122includes a molding compound such as epoxy, and is formed usingdispensing, injecting, and/or spraying techniques.

The structure of FIG. 1F is exemplified as a ball grid array (BGA)package. However, the present disclosure is not limited thereto. Inalternative embodiments, upon the process requirements, other packagingtypes such as a land grid array (LGA) package can also be applied.

Referring to FIG. 1G, the carrier C2 is de-boned from the backside ofthe structure, and a protection layer 124 is optionally formed over thefront side of the same structure. In some embodiments, the carrier C2with the semiconductor chip 100, the through-via TV, the encapsulant108, the redistribution layer structures 112/118 and the balls 120 isturned over, the de-bonding layer of the carrier C2 is decomposed underheat of light, and the carrier C2 is then released from the structureformed thereon. In some embodiments, the protection layer 124 is formedover the polymer layer 114. In some embodiments, the protection layer124 is a dielectric layer or an insulating layer with a sufficientmechanical strength. In some embodiments, the protection layer 124 isconfigured to protect the underlying structure against mobile ions from,for example, the surface of a finger. A sensor package 1 of thedisclosure as a fingerprint sensor package is thus completed.

In some embodiments, the first patterns P1 serve as sensing/detectionelectrodes or sensing pixels coupled to the semiconductor chip 100, andthe capacitance formed between each of the first patterns P1 and thesurface of the finger depending on unevenness of a fingerprint isdetected, whereby a so-called fingerprint pattern is obtained. Inalternative embodiments, the first patterns P1 serve as enhancementpatterns for enhancing the intensity of an electromagnetic wave. In someembodiments, the first patterns P1 as enhancement patterns are floatingelectrodes which are, for example, partially overlapped with orseparating from the sensing electrodes upon the design requirements.

The method described in FIG. 1A to FIG. 1G is called a “chip PnP(pick-and-place) first” process through the specification, in which asemiconductor chip 100 is picked and placed on a carrier before abackside redistribution layer structure 118 is formed. However, thepresent disclosure is not limited thereto. In some embodiments, thesensor package of the disclosure can be manufactured by a “backside RDLfirst” process in which a semiconductor chip 100 is picked and placed ona carrier after a backside redistribution layer structure 118 is formed.

FIG. 4A to FIG. 4F are cross-sectional views of a method of forming asensor package in accordance with alternative embodiments. The materialsand forming methods of the elements in FIG. 4A to FIG. 4F are similar tothose described in FIG. 1A to FIG. 1G, so the difference between themethods are illustrated below, and the similarity is not iteratedherein.

Referring to FIG. 4A, a carrier C3 is provided with a redistributionlayer structure 118 (i.e. a backside redistribution layer structure) andballs 120. In some embodiments, the carrier C3 has a de-bonding layerand a dielectric layer formed thereon, and the de-bonding layer isbetween the carrier C3 and the dielectric layer. In some embodiments,the carrier C3 has a package region 10 including a chip region 12 and aperiphery region 14 aside or around the chip region 12. In someembodiments, a polymer layer 116 is formed across the chip region 12 andthe periphery region 14 and has an opening exposing a portion of thecarrier C3. The redistribution layer structure 118 is formed over thepolymer layer 116 filling in the opening. The balls 120 are placed onand electrically connected to the redistribution layer structure 118. Anunderfill layer 122 is formed to encapsulate the redistribution layerstructure 118 and the lower portions of the balls 120.

Referring to FIG. 4B, the structure including the redistribution layerstructure 118 and the balls 120 is de-bonded from the carrier C3, andthe same structure is turned over and bonded to another carrier C4through a buffer layer 200. In some embodiments, the buffer layer 200includes a polymer such as a molding compound and/or an adhesive. Insome embodiments, the buffer layer 200 covers the exposed surfaces ofthe balls 120 and the underfill layer 122 after a pressing technique.

Referring to FIG. 4C, at least one through-via TV and a semiconductorchip 100 is placed on the carrier C4. In some embodiments, thethrough-via TV is formed over the polymer layer 116 and electricallyconnected to the redistribution layer structure 118, and thesemiconductor chip 100 is bonded to the polymer layer 116 at thebackside thereof. In some embodiments, the semiconductor chip 100 is alogic chip, a sensor chip or an imaging chip, and has a sensing surface101 at the front side thereof. In some embodiments, the semiconductorchip 100 has a substrate 102, at least one pad 103 over the substrate102, a passivation layer 104 over the substrate 102 and exposing aportion of the pad 103, and at least one connector 105 over thepassivation layer 104 and electrically connected to the pad 103.

Referring to FIG. 4D, an encapsulant 108 is formed over the carrier C4to encapsulate the semiconductor chip 100 and the through-via TV. Insome embodiments, the encapsulant 108 surrounds the semiconductor chip100 and the through-via TV, and exposes the surfaces of the through-viaTV and the connector 105.

Referring to FIG. 4E, a redistribution layer structure 112 (i.e. afront-side redistribution layer structure) is formed over the sensingsurface 101 of the semiconductor chip 100, wherein the forming of theredistribution layer structure 112 includes forming an antennatransmitter structure AT, an antenna receiver structure AR and aredistribution layer RDL. Thereafter, a polymer layer 114 is formed overthe redistribution layer structure 112.

Referring to FIG. 4F, a protection layer 124 is optionally formed overthe polymer layer 114, and the buffer layer 200 and the carrier C4 areremoved. The same sensor package 1 as shown in FIG. 1G is thuscompleted.

The above embodiments in which the sensor package 1 has a single ring asan antenna transmitter structure AT and a single layer of first patternsP1 as an antenna receiver structure AR are provided for illustrationpurposes, and are not construed as limiting the present disclosure. Inalternative embodiments, the antenna transmitter structure AT can bedesigned to have a double-ring shape or another suitable shape, and theantenna receiver structure AR can be designed to have multiple patternsat different levels.

The sensor packages of the disclosure serving as fingerprint sensorpackages are illustrated below. In some embodiments, the sensor package1/2/3/4/5/6 includes a semiconductor chip 100 and a redistribution layerstructure 112. The semiconductor chip 100 has a sensing surface 101. Theredistribution layer structure 112 is arranged to form an antennatransmitter structure AT aside the semiconductor chip 100 and an antennareceiver structure AR over the sensing surface 101 of the semiconductorchip 100. In some embodiments, the antenna transmitter structure AT inthe periphery region 14 surrounds the antenna receiver structure AR inthe chip region 12.

In some embodiments, the redistribution layer structure 112 furtherincludes a redistribution layer RDL between the antenna transmitterstructure AT and the antenna receiver structure AR. The redistributionlayer RDL is configured to connect a through-via TV in the peripheryregion 14 to a connector 105 of the semiconductor chip 100 in the chipregion 12. In some embodiments, the antenna transmitter structure AT hasa single-ring structure surrounding the first patterns P1 of the antennareceiver structure AR, as shown in the cross-section views of FIGS. 1Gand 4F and the top views of FIGS. 2 and 3. In alternative embodiments,the antenna transmitter structure AT has a double-ring structuresurrounding the first patterns P1 of the antenna receiver structure AR,as shown in the cross-section view of FIG. 5 and the top view of FIG. 6.

In some embodiments, the redistribution layer structure 112 is amulti-layer structure rather than a single-layer structure. For example,as shown in the sensor package 3 of FIG. 7 and the sensor package 4 ofFIG. 8, the redistribution layer structure 112 is a double-layerstructure that includes redistribution layers RDL1 and RDL2, an antennatransmitter structure AT, and an antenna receiver structure AR includingfirst patterns P1 and second patterns P2. In some embodiments, theredistribution layer RDL1 is formed to electrically connect to thethrough-via TV, and the first patterns P1 of the antenna receiverstructure AR are simultaneously formed over the sensing surface 101 ofthe semiconductor chip 100. Thereafter, the redistribution layer RDL2 isformed to electrically connect to the redistribution layer RDL1, thesecond patterns P2 of the antenna receiver structure AR aresimultaneously formed over the first patterns P1, and the antennatransmitter structure AT is simultaneously formed around the secondpatterns P2. Thereafter, a polymer layer 115 and an optional protectionlayer 124 are formed over the antenna transmitter structure AT and theantenna receiver structure AR. In some embodiments, the second patternsP2 are not aligned with the first patterns P1, as shown in FIG. 7. Insome embodiments, the first patterns P1 serve as enhancement patterns,and the second patterns P2 serve as sensing electrodes. In alternativeembodiments, the second patterns P2 are aligned with the first patternsP1, as shown in FIG. 8. In alternative embodiments, the first patternsP1 and the second patterns P2 serve as sensing electrodes.

The sensor package 5 of FIG. 9 is similar to the sensor package 3 ofFIG. 7, and the difference between them lies in that the antennatransmitter structure AT in FIG. 9 has two patterns at different levels.Specifically, the inner pattern of the antenna transmitter structure ATis formed during the forming of the redistribution layer RDL1 and thefirst patterns P1, and the outer pattern of the antenna transmitterstructure AT is formed during the formation of the redistribution layerRDL2 and the second patterns P2.

In some embodiments, as shown in the sensor package 6 of FIG. 10, theredistribution layer structure 112 is a three-layer structure thatincludes redistribution layers RDL1, RDL2 and RDL3, an antennatransmitter structure AT, and an antenna receiver structure AR havingfirst patterns P1, second patterns P2 and third patterns P3. In someembodiments, the redistribution layer RDL1 is formed to electricallyconnect to the through-via TV, and the first patterns P1 of the antennareceiver structure AR are simultaneously formed over the sensing surface101 of the semiconductor chip 100. Thereafter, the redistribution layerRDL2 is formed to electrically connect to the redistribution layer RDL1,and the second patterns P2 of the antenna receiver structure AR aresimultaneously formed over the first patterns P1. Afterwards, theredistribution layer RDL3 is formed to electrically connect to theredistribution layer RDL2, and the third patterns P3 of the antennareceiver structure AR are simultaneously formed over the second patternsP2, and the antenna transmitter structure AT is simultaneously formedaround the third patterns P3. In some embodiments, the second patternsP2 are not aligned with the first patterns P1, and the third patterns P3are aligned with the second patterns P2. In some embodiments, the firstpatterns P1 serve as enhancement patterns, and second and third patternsP2 and P3 serve as sensing electrodes. Thereafter, a polymer layer 117and an optional protection layer 124 are formed over the antennatransmitter structure AT and the antenna receiver structure AR.

In alternative embodiments, the first, second and third patterns P1, P2and P3 are aligned to each other and all serve as sensing electrodes. Inyet alternative embodiments, the first and third patterns P1 and P3 arealigned to each other and serve as sensing electrodes, while the secondpatterns P2 are misaligned to the first and third patterns P1 and P3 andserve as enhancement patterns. In still alternative embodiments, thefirst and second patterns P1 and P2 are aligned to each other and serveas sensing electrodes, while the third patterns P3 are misaligned to thefirst and second patterns P1 and P2 and serve as enhancement patterns.

Upon the process requirements, each pattern of the transmitter structureAT can have a ring shape, a bar shape, a spiral shape, a wave shape, ameandering shape or a combination thereof, and each of the first, secondand third patterns P1, P2 and P3 of the antenna transmitter structure ATcan have a ring shape, a snake shape, a bar shape, a fishbone shape, afence shape, a grid shape, a ring shape or a combination thereof.

The shapes and numbers of the antenna transmitter patterns and theantenna receiver patterns (i.e. first to third patterns) are providedmerely for illustration purposes, and are not to be construed aslimiting the scope of the present disclosure. It is appreciated bypeople having ordinary skill in the art that other combinations andconfigurations of the antenna transmitter patterns and the antennareceiver patterns are possible. In some embodiments, the antennareceiver patterns are distributed evenly in the chip region. Inalternative embodiments, the antenna receiver patterns are distributedrandomly and unevenly in the chip region. The shapes, sizes, variations,configurations and distributions of the antenna transmitter patterns andthe antenna receiver patterns are not limited by the present disclosure.

In the above embodiments, each sensor package 1/2/3/4/5/6 serves as afingerprint sensor package. However, the present disclosure is notlimited thereto. A sensor package is contemplated as falling within thespirit and scope of the present disclosure as long as an antennatransmitter structure and an antenna receiver structure are formedduring the formation of a redistribution layer structure in a sensorpackage. For example, the sensor package of the disclosure can serve asa molecular-based sensor package, such as a biosensor package.

FIG. 11 to FIG. 13 are cross-sectional views of sensor packages inaccordance with yet alternative embodiments. FIG. 14 is a simplified topview of an antenna transmitter structure and an antenna receiverstructure of a sensor package in accordance with yet alternativeembodiments. FIG. 15 is a flow chart illustrating a method of forming asensor package in accordance with some embodiments.

The method of forming the sensor package 7/8/9 is similar to the methodof forming the sensor package 1/2/3/4/5/6, and the difference betweenthem lies in the pattern distribution of the redistribution layerstructure 112.

At process 300, a semiconductor chip 100 is provided with a sensingsurface 101. In some embodiments, the semiconductor chip 100 is a logicchip, a sensor chip or an imaging chip, and the sensing surface 101 isat the front side thereof.

At process 302, a redistribution layer structure 112 is formed over thesensing surface 101, wherein the forming of the redistribution layerstructure 112 includes forming an antenna transmitter structure AT andan antenna receiver structure AR.

In some embodiments, in the sensor package 1/2/3/4/5/6, theredistribution layer structure 112 is formed to have an antennatransmitter structure AT aside the semiconductor chip 100, an antennareceiver structure AR over the sensing surface 101 of the semiconductorchip 100, and a redistribution layer RDL between the antenna transmitterstructure AT and the antenna receiver structure AR.

In the sensor package 7/8, the redistribution layer structure 112 isformed to have sensing patterns SP over the sensing surface 101 of thesemiconductor chip 100, an antenna transmitter structure AT and anantenna receiver structure AR at two sides of the sensing patterns SP,and a redistribution layer RDL aside the antenna transmitter structureAT. In some embodiments, in the sensor package 7/8/9, the redistributionlayer RDL is formed to electrically connect to a through-via TV and theconnector 105, the antenna transmitter structure AT is formed toelectrically couple to a signal transmitting terminal (not shown), thesensing patterns SP are formed to electrically couple to thesemiconductor chip 100, and the antenna receiver structure AR is formedto electrically connect to another through-via TV aside thesemiconductor chip 100.

In the sensor package 9, the redistribution layer structure 112 isformed to have enhancement patterns EP over the sensing surface 101 ofthe semiconductor chip 100, a redistribution layers RDL1 aside theenhancement patterns EP, sensing patterns SP over the enhancementpatterns EP, an antenna transmitter structure AT and an antenna receiverstructure AR at two sides of the sensing patterns SP, and aredistribution layer RDL2 aside the antenna transmitter structure AT. Insome embodiments, in the sensor package 9, the redistribution layer RDL1is formed to electrically connect to a through-via TV and a connector105, the redistribution layer RDL2 is formed to electrically connect tothe redistribution layer RDL1, the antenna transmitter structure AT isformed to electrically couple to a signal transmitting terminal (notshown), the sensing patterns SP are formed to electrically couple to thesemiconductor chip 100, and the antenna receiver structure AR is formedto electrically connect to another through-via TV aside thesemiconductor chip 100. In some embodiments, the enhancement patterns EPare floating electrodes which are, for example, partially overlappedwith or separating from the sensing electrodes upon the designrequirements. In alternative embodiments, the enhancement patterns EPare electrically coupled to the sensing patterns SP.

At process 304, a polymer layer 114 is formed over the redistributionlayer structure 112. In some embodiments, in the sensor package1/2/3/4/5/6, the polymer 114 completely covers the antenna transmitterstructure AT and the antenna receiver structure AR. In alternativeembodiments, in the sensor package 7/8/9, the polymer 114 covers theantenna transmitter structure AT and the antenna receiver structure ARwhile exposes top surfaces of the sensing patterns SP. For example, thepolymer 114 is first blanket-formed over the redistribution layerstructure 112, and then partially removed until the sensing patterns SPare exposed.

The sensor packages of the disclosure serving as molecular-based sensorpackages are illustrated below. In some embodiments, the sensor package7/8/9 includes a semiconductor chip 100 and a redistribution layerstructure 112. The semiconductor chip 100 has a sensing surface 101. Theredistribution layer structure 112 is arranged to form sensing patternsSP over the sensing surface 101 of the semiconductor chip 100 and toform an antenna transmitter structure AT and an antenna receiverstructure AR aside the sensing patterns SP. In some embodiments, thesensor package 7/8/9 further includes a polymer layer 114 and molecularlinkers ML, the polymer layer 114 covers the antenna transmitterstructure AT and the antenna receiver structure AR while exposes topsurfaces of the sensing patterns SP, and the molecular linkers MLrespectively cover the exposed top surfaces of the sensing patterns SP.

In some embodiments, the surfaces of the molecular linkers ML are lowerthan the surface of the adjacent polymer layer 114, as shown in FIG. 11and FIG. 13. In alternative embodiments, the surfaces of the molecularlinkers ML are higher than the surface of the adjacent polymer layer114, as shown in FIG. 12.

In some embodiments, the sensor package 7/8/9 serves as amolecular-based sensor package or a biosensor package for sensing anddetecting target molecules or biomolecules, and the sensing patterns SPserve as a resonator and are arranged in an array between the antennatransmitter structure AT and the antenna receiver structure AR. In someembodiments, when the target molecules or biomolecules binds to themolecular linkers ML or bio-linkers, there is a RF resonance frequencychange, a capacitance change and/or a current change in the sensorpackage 7/8/9, so the concentration/amount of target molecules orbiomolecules in air or liquid can be obtained based on the capacitancechange and/or the current change.

In some embodiments, each of the antenna transmitter structure AT andthe antenna receiver structure AR has a bar shape, and each of thesensing patterns SP has a split-ring shape, as shown in the top view ofFIG. 14. However, the disclosure is not limited thereto. The shape ofeach of the antenna transmitter structure AT, the antenna receiverstructure AR and the sensing patterns SP can be adjusted upon theprocess requirements. In other words, each of the antenna transmitterstructure and the antenna receiver structure have a bar shape, a spiralshape, a wave shape, a meandering shape or a combination thereof, andeach of the sensing patterns SP has a split-ring shape or another shapethat exhibit the same resonance frequency as the transceiver.

The shapes and numbers of the antenna transceiver patterns and thesensing patterns are provided merely for illustration purposes, and arenot to be construed as limiting the scope of the present disclosure. Itis appreciated by people having ordinary skill in the art that othercombinations and configurations of the antenna transceiver patterns andthe sensing patterns are possible. In some embodiments, the sensingpatterns are distributed evenly in the chip region. In alternativeembodiments, the sensing patterns are distributed randomly and unevenlyin the chip region. The shapes, sizes, variations, configurations anddistributions of the antenna transceiver pattern and the sensingpatterns are not limited by the present disclosure.

In view of the above, in some embodiments of the present disclosure, anantenna transmitter structure and an antenna receiver structure areformed during the formation of a redistribution structure in a sensorpackage, so the process can be greatly simplified and the package sizecan be significantly reduced. The sensor package of the disclosure canserve as a fingerprint sensor package or a molecular-based sensor (e.g.,a biosensor) package.

In accordance with some embodiments of the present disclosure, a sensorpackage includes a semiconductor chip and a redistribution layerstructure. The semiconductor chip has a sensing surface. Theredistribution layer structure is arranged to form an antennatransmitter structure aside the semiconductor chip and an antennareceiver structure over the sensing surface of the semiconductor chip.

In accordance with alternative embodiments of the present disclosure, asensor package includes a semiconductor chip and a redistribution layerstructure. The semiconductor chip has a sensing surface. Theredistribution layer structure is arranged to form a plurality ofsensing patterns over the sensing surface of the semiconductor chip andto form an antenna transmitter structure and an antenna receiverstructure aside the plurality of sensing patterns.

In accordance with yet alternative embodiments of the presentdisclosure, a method of forming a sensor package includes the followingoperations. A semiconductor chip having a sensing surface is provided. Aredistribution layer structure is formed over the sensing surface,wherein the forming of the redistribution layer structure includesforming an antenna transmitter structure and an antenna receiverstructure. A polymer layer is formed over the redistribution layerstructure.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A semiconductor package, comprising: asemiconductor chip; and a redistribution layer structure arranged toform an antenna transmitter structure and an antenna receiver structureover the semiconductor chip, wherein from a top view, the antennatransmitter structure is outside of a chip region of the semiconductorchip, and the antenna receiver structure is within the chip region ofthe semiconductor chip.
 2. The semiconductor package of claim 1, whereinthe antenna transmitter structure surrounds the antenna receiverstructure.
 3. The semiconductor package of claim 1, wherein thetransmitter structure has a ring shape, a bar shape, a spiral shape, awave shape, a meandering shape or a combination thereof.
 4. Thesemiconductor package of claim 1, wherein the antenna receiver structurehas a plurality of first patterns over the semiconductor chip.
 5. Thesemiconductor package of claim 4, wherein each of the plurality of firstpatterns has an island shape, a snake shape, a bar shape, a fishboneshape, a fence shape, a grid shape, a ring shape or a combinationthereof.
 6. The semiconductor package of claim 4, wherein the antennareceiver structure further has a plurality of second patterns over theplurality of first patterns.
 7. The semiconductor package of claim 6,wherein the plurality of second patterns are aligned with the pluralityof first patterns.
 8. The semiconductor package of claim 6, wherein theantenna receiver structure further has a plurality of third patternsover the plurality of second patterns, the plurality of third patternsare aligned with the plurality of second patterns, and the plurality ofsecond patterns are not aligned with the plurality of first patterns. 9.The semiconductor package of claim 6, wherein the plurality of secondpatterns are not aligned with the plurality of first patterns.
 10. Thesemiconductor package of claim 1, wherein the semiconductor package is afingerprint semiconductor package.
 11. A semiconductor package,comprising: a semiconductor chip; and a redistribution layer structurearranged to form a plurality of sensing patterns, an antenna transmitterstructure and an antenna receiver structure, wherein the sensingpatterns are configured to detect target molecules and disposed over thesemiconductor chip, and the antenna transmitter structure and theantenna receiver structure are disposed aside the sensing patterns. 12.The semiconductor package of claim 11, wherein the semiconductor packagefurther comprises a polymer layer covering the antenna transmitterstructure and the antenna receiver structure while exposing top surfacesof the sensing patterns.
 13. The semiconductor package of claim 12,further comprising molecular linkers respectively covering the exposedtop surfaces of the sensing patterns.
 14. The semiconductor package ofclaim 11, wherein the antenna receiver structure is electricallyconnected to a through-via aside the semiconductor chip.
 15. Thesemiconductor package of claim 11, wherein each of the antennatransmitter structure and the antenna receiver structure has a barshape, a spiral shape, a wave shape, a meandering shape or a combinationthereof.
 16. The semiconductor package of claim 11, wherein each of thesensing patterns has a split-ring shape.
 17. The semiconductor packageof claim 11, wherein the antenna transmitter structure and the antennareceiver structure are laterally aside a redistribution layer of theredistribution layer structure.
 18. A method of forming a semiconductorpackage, comprising: providing a semiconductor chip; forming aredistribution layer, an antenna transmitter structure and an antennareceiver structure over the semiconductor chip, wherein theredistribution layer, the antenna transmitter structure and the antennareceiver structure are laterally separated from each other; and forminga polymer layer over the redistribution layer structure.
 19. The methodof claim 18, wherein the antenna receiver structure comprises aplurality of first patterns over the semiconductor chip.
 20. The methodof claim 18, wherein the formation of the redistribution layer structurefurther comprises forming a plurality of sensing patterns configured todetect target molecules and locate over the semiconductor chip betweenthe antenna transmitter structure and the antenna receiver structure.